mg1001 C mg1061 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 1 tm ? gunn diodes cathode heat s ink copyright ? 2008 rev: 2009-01-19 discrete frequency: cathode heatsink featur es cw designs to 500 mw pulsed designs to 10 w frequency coverage specified from 5.9C95 ghz low phase noise high reliability applications motion detectors transmitters and receivers beacons automotive collision avoidance radars radars radiometers instrumentation description microsemis gaas gunn di odes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at msc by the vapor phase epitaxy technique. the layers are processed using proprietary techniques resulting in low phase and 1/f noise. mdt gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5C110 ghz. downloaded from: http:///
mg1001 C mg1061 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 2 tm ? gunn diodes cathode heat s ink copyright ? 2008 rev: 2009-01-19 (discr ete fr equency: cathode heatsink) c band gunn diodes (specifications @ 25c) operating curr ent part number operating f r equency 1 (ghz) min. power 2 (mw) t yp. operating v oltage (v) min. (ma) max. (ma) package outline 3 mg1001-11 5.9C8.2 50 12 200 400 m11 mg1002-11 5.9C8.2 100 12 300 600 m11 mg1003-15 5.9C8.2 250 12 600 1100 m15 mg1004-15 5.9C8.2 500 12 900 1300 m15 x band gunn diodes (specifications @ 25c) operating curr ent part number operating f r equen y 1 c (ghz) min. power 2 (mw) t yp. operating v oltage (v) min. (ma) max. (ma) package outline 3 mg1005-11 8.2C12.0 50 10 200 400 m11 mg1006-11 8.2C12.0 100 10 400 700 m11 mg1007-15 8.2C12.0 250 10 700 1200 m15 mg1008-15 8.2C12.0 500 10 1000 1600 m15 ku band gunn diodes (specifications @ 25c) operating curr ent part number operating f r equency 1 (ghz) min. power 2 (mw) t yp. operating v oltage (v) min. (ma) max. (ma) package outline 3 mg1009-11 12.4C18.0 50 8 300 500 m11 MG1010-11 12.4C18.0 100 8 400 800 m11 mg1011-15 12.4C18.0 250 8 800 1200 m15 mg1012-15 12.4C18.0 500 8 1100 1700 m15 k band gunn diodes (specifications @ 25c) operating curr ent part number operating f r equency 1 (ghz) min. power 2 (mw) t yp. operating v oltage (v) min. (ma) max. (ma) package outline 3 mg1013-16 18.0C26.5 50 6 400 600 m16 mg1014-16 18.0C26.5 100 6 500 1000 m16 mg1015-16 18.0C26.5 200 6 800 1400 m16 mg1016-17 18.0C23.0 400 6 900 1700 m17 1 microsemi gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating f requency range shown. additional frequencies are available; please contact the factory . 2 power is measured using a critically coupled test cavity . for pulsed diodes, pulse width = 1 s, duty factor = 1% typ. 3 polarity: anode is the cap and cathode is the heatsink. downloaded from: http:///
mg1001 C mg1061 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 3 tm ? gunn diodes cathode heat s ink copyright ? 2008 rev: 2009-01-19 gunn diodes (discr ete fr equency: cathode heatsink) ka band gunn diodes (specifications @ 25c) operating curr ent part number operating f r equency 1 (ghz) min. power 2 (mw) t yp. operating v oltage (v) min. (ma) max. (ma) package outline 3 mg1017-16 26.5C40.0 50 4.5 300 700 m16 mg1018-16 26.5C40.0 100 4.5 600 1100 m16 mg1019-16 26.5C40.0 200 5.0 800 1400 m16 mg1020-16 26.5C40.0 250 5.5 800 1600 m16 mg1039-16 26.5C35.0 300 5.5 1000 1700 m16 mg1040-16 26.5C35.0 350 5.5 1000 1800 m16 u band gunn diodes (specifications @ 25c) operating curr ent part number operating f r equen y 1 c (ghz) min. power 2 (mw) t yp. operating v oltage (v) min. (ma) max. (ma) package outline 3 mg1021-16 40.0C60.0 50 4 400 800 m16 mg1022-16 40.0C60.0 100 4 700 1200 m16 mg1023-16 40.0C50.0 150 4 800 1600 m16 v and w band gunn diodes (specifications @ 25c) operating curr ent part number operating f r equen y 1 c (ghz) min. power 2 (mw) t yp. operating v oltage (v) min. (ma) max. (ma) package outline 3 mg1036-16 60.5C85.0 10 4.5 400 900 m16 mg1037-16 60.5C85.0 50 5 500 1100 m16 mg1024-16 85C95 10 4.5 450 1100 m16 mg1025-16 85C95 20 4.5 500 1000 m16 mg1038-16 85C95 50 5 450 1200 m16 high power pulsed gunn diodes (specifications @ 25c) part number operating f r equency 1 (ghz) min. power 2 (mw) t yp. operating v oltage (v) t yp. operating curr ent (amps.) package outline 3 mg1034-15 9.3 5 35 8 m15 stacked pulsed gunn diodes (specifications @ 25c) part number operating f r equen y 1 c (ghz) min. power 2 (w atts) t yp. operating v oltage (v) t yp. operating curr ent (amps) number of stacks package outline 3 mg1060-15 9.3 10 70 6 2 m15 1 microsemi gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating f requency range shown. additional frequencies are available; please contact the factory . 2 power is measured using a critically coupled test cavity . for pulsed diodes, pulse width = 1 s, duty factor = 1% typ. 3 polarity: anode is the cap and cathode is the heatsink. downloaded from: http:///
mg1001 C mg1061 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 4 tm ? gunn diodes cathode heat s ink copyright ? 2008 rev: 2009-01-19 gunn diodes (discr ete fr equency: cathode heatsink) t ypical characteristics 1.0 -50c 90c i bias i threshold ratio power output (mw) 0.8 0.6 0.4 0.2 300 250 200 150 100 0 0 1 2 3 0 2 4 6 8 10 12 v bias v threshold ratio i bias ratio vs. v bias ratio bias v oltage (v) power output vs. bias v oltage important: for the most current data, consult our website : www.microsemi.com specifications are subject to change. consult factory for the latest information . these devices are esd sensitive and mu st be handled using esd precautions. these products are supplied with a rohs complaint gold finish . downloaded from: http:///
|
